Metal-ferroelectric-insulator-semiconductor memory FET with long retention and high endurance

被引：192

作者：

Sakai, S ^{[1
]}

Ilangovan, R ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 06期

关键词：

endurance; ferroelectrics; field-effect transistor (FET); metal-ferroelectric-insulator semiconductor (MFIS); nonvolatile memory; retention;

D O I：

10.1109/LED.2004.828992

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A ferroelectric memory field-effect transistor (FET) with a Pt-SrBi2 Ta2O9-Hf-Al-O-Si gate stack was fabricated and its electrical properties were characterized. The insulating and ferroelectric layers were successively deposited by a laser ablation technique. Excellent data retention characteristics were obtained. The drain currents of on- and off-states were measured as a function of time, after +/-6 V poling voltage applied to the gate electrode. The current ratio of the on- and off-states was more than 10(6) even after 12 days. Moreover, after 10(12) cycles of +/-8 V pulses, this ratio was also more than 10(6).

引用

页码：369 / 371

页数：3

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