Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes

被引：268

作者：

Arif, Ronald A. ^{[1
]}

Ee, Yik-Khoon ^{[1
]}

Tansu, Nelson ^{[1
]}

机构：

[1] Lehigh Univ, Ctr Opt Technol, Dept Elect & Comp Engn, Bethlehem, PA 18015 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2775334

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Staggered InGaN quantum wells (QWs) grown by metal-organic chemical vapor deposition are demonstrated as improved active region for visible light emitters. Theoretical studies indicate that InGaN QW with step-function-like In content in the quantum well offers significantly improved radiative recombination rate and optical gain in comparison to the conventional type-I InGaN QW. Experimental results of light emitting diode (LED) structure utilizing staggered InGaN QW show good agreement with theory. Polarization band engineering via staggered InGaN quantum well allows enhancement of radiative recombination rate, leading to the improvement of photoluminescence intensity and LED output power. (c) 2007 American Institute of Physics.

引用

页数：3

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