Electron-emission-enhanced diamond nucleation on Si by hot filament chemical vapor deposition

被引：40

作者：

Chen, QJ ^{[1
]}

Lin, ZD ^{[1
]}

机构：

[1] CHINESE ACAD SCI,INST PHYS,STATE KEY LAB SURFACE PHYS,BEIJING 100080,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 17期

关键词：

D O I：

10.1063/1.116164

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diamond nucleation on mirror-polished Si was enhanced by electron emission using hot filament chemical vapor deposition. The nucleation density was 10(8) cm(-2). The mechanism of diamond nucleation is carefully discussed. It is surmised that it is electron emission that is responsible for the enhancement of the diamond nucleation in our experiments. (C) 1996 American Institute of Physics.

引用

页码：2450 / 2452

页数：3

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