Local structures around Er atoms doped in InP revealed by fluorescence EXAFS

被引：12

作者：

Ofuchi, H ^{[1
]}

Kawamura, D ^{[1
]}

Matsubara, N ^{[1
]}

Tabuchi, M ^{[1
]}

Fujiwara, Y ^{[1
]}

Takeda, Y ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Mat Sci & Engn, Chikusa Ku, Nagoya, Aichi 46401, Japan

来源：

MICROELECTRONIC ENGINEERING | 1998年 / 43-4卷

关键词：

erbium; InP; OMVPE; EXAFS;

D O I：

10.1016/S0167-9317(98)00253-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated OMVPE-grown InP doped with Er by fluorescence EXAFS (extended X-ray absorption fine structure) in order to study the local structures around Er atoms, so as to understand the luminescence property of Er atoms in semiconductors. The EXAFS analysis revealed that the Er atoms substituted into the In-site of InP, in the samples grown below 550 degrees C, which exhibited high efficiency of luminescence, while the Er atoms constructed the NaC1-structure ErP, in the samples grown above 580 degrees C, which exhibited low efficiency of luminescence. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：745 / 751

页数：7

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