Preparation of Bi2WO6 thin films by metalorganic chemical vapor deposition and their electrical properties

被引：27

作者：

Ishikawa, K ^{[1
]}

Watanabe, T ^{[1
]}

Funakubo, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Technol, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

THIN SOLID FILMS | 2001年 / 392卷 / 01期

关键词：

MOCVD; Bi2WO6; film preparation; ferroelectric properties; ferroelectric random access memory;

D O I：

10.1016/S0040-6090(01)01005-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bi2WO6 films were deposited by metalorganic chemical vapor deposition for the first time. The perfect epitaxially grown (001)-oriented films were deposited on (100)LaAlO3, (100)SrTiO3 and (100)CaRuO3//(100)SrTiO3 substrates at 500 degreesC. However, the perfect (001)-oriented film was not deposited on a (100)CaRuO3//(100)SrTiO3 substrate when the deposition temperature decreased to 400 degreesC. Ferroelectricity was observed only for the film deposited on the (100)CaRuO3//(100)SrTiO3 substrate at 600 degreesC. The doubled remanent polarization and the coercive field of the film were 0.17 muC/cm(2) and 7.0 kV/cm, respectively. (C) 2001 Elsevier Science B.V. All rights reserved.

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页码：128 / 133

页数：6

相关论文

共 15 条

[1] Epitaxial ferroelectric aurivillius-type phases on metallic oxides by pulsed laser deposition [J].

Curran, C ;

Senz, ST ;

Pignolet, A ;

Alexe, M ;

Welke, S ;

Hesse, D .

EPITAXIAL OXIDE THIN FILMS III, 1997, 474 :15-20

[2] Crystal structure and dielectric property of epitaxially grown (Ba, Sr)TiO3 thin film prepared by molecular chemical vapor deposition [J].

Funakubo, H ;

Takeshima, Y ;

Nagano, D ;

Shinozaki, K ;

Mizutani, N .

JOURNAL OF MATERIALS RESEARCH, 1998, 13 (12) :3512-3518

[3] Microstructure and dielectric properties of epitaxial Bi2WO6 deposited by pulsed laser ablation [J].

Hamada, M ;

Tabata, H ;

Kawai, T .

THIN SOLID FILMS, 1997, 306 (01) :6-9

[4] Metalorganic chemical vapor deposition of conductive CaRuO3 thin films [J].

Higashi, N ;

Okuda, N ;

Funakubo, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (5A) :2780-2783

[5] Metalorganic chemical vapor deposition of epitaxial SrBi2Ta2O9 thin films and their crystal structure [J].

Ishikawa, K ;

Nukaga, N ;

Funakubo, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (3A) :L258-L260

[6] Crystal structure and electrical properties of epitaxial SrBi2Ta2O9 films [J].

Ishikawa, K ;

Funakubo, H ;

Saito, K ;

Suzuki, T ;

Nishi, Y ;

Fujimoto, M .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) :8018-8023

[7] Electrical properties of (001)- and (116)-oriented epitaxial SrBi2Ta2O9 thin films prepared by metalorganic chemical vapor deposition [J].

Ishikawa, K ;

Funakubo, H .

APPLIED PHYSICS LETTERS, 1999, 75 (13) :1970-1972

[8]

ISHIKAWA K, 2001, IN PRESS KEY ENG MAT

[9] Y2O3-stabilized ZrO2 thin films prepared by metalorganic chemical vapor deposition [J].

Matsuzaki, T ;

Okuda, N ;

Shinozaki, K ;

Mizutani, N ;

Funakubo, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (11) :6229-6232

[10]

NEWKIRK HW, 1972, FERROELECTRICS, V4, P358