Mass and energy analyses of substrate-incident ions in TiO2 deposition by RF magnetron sputtering

被引:29
作者
Okimura, K
Shibata, A
机构
[1] Fukui National College of Technology, Sabae, Fukui 916, Geshicho
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 1A期
关键词
rutile TiO2 film; rf magnetron sputtering; substrate-incident ion; mass analyses; kinetic energy distribution;
D O I
10.1143/JJAP.36.313
中图分类号
O59 [应用物理学];
学科分类号
摘要
Mass-resolved measurements of substrate-incident ion (SII) current and ion kinetic energy distributions (IEDs) were carried out for TiO2 deposition by rf (13.56 MHz) magnetron sputtering. Substrate-incident ion current was mainly composed of Ar+, O-2(+) and O+. Several minor ions, such as Ti+,TiO+; ArO+ and Ar-2(+) were also detected. The dominant species of substrate-incident ion was O-2(+) at a total pressure higher than 20 mTorr, while Ar+ was dominant one at a total pressure of 2 mTorr with which rutile TiO2 grew on a non-heated substrate. Variations in IEDs for Ar+ and O-2(+) against total gas pressure, oxygen Bow rate and applied rf power were presented. The energy with peak intensity in IED and the mean ion energy increased with both decreasing pressure and increasing rf power. Strong correlation between IEDs and the growth of crystallized TiO2 were observed. Finally we discussed the growth condition of rutile TiO2 films based on the results including the de self-bias voltage.
引用
收藏
页码:313 / 318
页数:6
相关论文
共 19 条
[1]  
Chapman BN, 1980, Glow Discharges Processes J, DOI DOI 10.1063/1.2914660
[2]   ION TRANSIT THROUGH CAPACITIVELY COUPLED AR SHEATHS - ION CURRENT AND ENERGY-DISTRIBUTION [J].
GREENE, WM ;
HARTNEY, MA ;
OLDHAM, WG ;
HESS, DW .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) :1367-1371
[3]   MASS SPECTROMETRIC STUDIES OF MOLECULAR IONS IN THE NOBLE GASES [J].
HORNBECK, JA ;
MOLNAR, JP .
PHYSICAL REVIEW, 1951, 84 (04) :621-625
[4]   3-BODY ASSOCIATION REACTIONS OF HE+, NE+, AND AR+ IONS IN THEIR PARENT GASES FROM 78-K TO 300-K [J].
JOHNSEN, R ;
CHEN, A ;
BIONDI, MA .
JOURNAL OF CHEMICAL PHYSICS, 1980, 73 (04) :1717-1720
[5]  
KAWAI T, 1986, CERAMICS, V21, P326
[6]  
KOHLER K, 1985, J APPL PHYS, V57, P59, DOI 10.1063/1.335396
[7]   ION ENERGY-DISTRIBUTION FUNCTIONS IN A PLANAR INDUCTIVELY-COUPLED RF DISCHARGE [J].
KORTSHAGEN, U ;
ZETHOFF, M .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 1995, 4 (04) :541-550
[8]   ION-BOMBARDMENT IN RF-PLASMAS [J].
LIU, J ;
HUPPERT, GL ;
SAWIN, HH .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) :3916-3934
[9]   NUCLEATION AND GROWTH IN TIO2 FILMS PREPARED BY SPUTTERING AND EVAPORATION [J].
LOBL, P ;
HUPPERTZ, M ;
MERGEL, D .
THIN SOLID FILMS, 1994, 251 (01) :72-79
[10]   ION-BASED METHODS FOR OPTICAL THIN-FILM DEPOSITION [J].
MARTIN, PJ .
JOURNAL OF MATERIALS SCIENCE, 1986, 21 (01) :1-25