Characterization of C:H:N deposition from CH4/N-2 rf plasmas using optical emission spectroscopy

被引:143
作者
Clay, KJ
Speakman, SP
Amaratunga, GAJ
Silva, SRP
机构
[1] Engineering Department, Cambridge University, Cambridge CB2 1PZ, Trumpington Street
[2] Dept. of Elec. Eng. and Electronics, University of Liverpool
[3] Dept. of Electron. and Elec. Eng., University of Surrey
关键词
D O I
10.1063/1.361439
中图分类号
O59 [应用物理学];
学科分类号
摘要
Optical emission spectra (OES) from CH4/N-2 rf plasmas, which are used for the deposition of nitrogen-containing hydrogenated amorphous carbon (a-C:H:N) thin films, have been characterized. Previously unidentified spectral lines have been assigned to atomic N. Further identified species include CH, H, H-2, N-2, N-2(+), N, and CN. Variations between spectra from the pure CH4 or N-2 plasmas and the mixed CH4/N-2, plasma are discussed. The enhancement of excited nitrogen species, with the addition CH4, is attributed to Penning ionization. The observed OES variations of the CH4/N-2 plasma with power, pressure, and CH4/N-2, ratio are explained in terms of possible reaction mechanisms and their activation, and correlated with preliminary film growth characteristics. (C) 1996 American Institute of Physics.
引用
收藏
页码:7227 / 7233
页数:7
相关论文
共 49 条
  • [11] ECONOMOU DJ, 1988, J ELECTROCHEM SOC, V135, P757
  • [12] STRUCTURAL MODIFICATIONS IN A-C-H FILMS DOPED AND IMPLANTED WITH NITROGEN
    FRANCESCHINI, DF
    ACHETE, CA
    FREIRE, FL
    BEYER, W
    MARIOTTO, G
    [J]. DIAMOND AND RELATED MATERIALS, 1994, 3 (1-2) : 88 - 93
  • [13] INFLUENCE OF THE DISCHARGE FREQUENCY (35 KHZ AND 13.56 MHZ) ON THE COMPOSITION OF PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION A-C-H FILMS
    GOMEZALEIXANDRE, C
    SANCHEZ, O
    ALBELLA, JM
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (01): : 143 - 146
  • [14] GRILL A, 1992, DIAMOND FILM TECHNOL, V2, P61
  • [15] STRUCTURAL AND OPTICAL-PROPERTIES OF AMORPHOUS-CARBON NITRIDE
    HAN, HX
    FELDMAN, BJ
    [J]. SOLID STATE COMMUNICATIONS, 1988, 65 (09) : 921 - 923
  • [16] PROPERTIES OF HYDROGENATED AMORPHOUS-CARBON FILMS AND THE EFFECTS OF DOPING
    JONES, DI
    STEWART, AD
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (05): : 423 - 434
  • [17] SYMMETRY-BREAKING IN NITROGEN-DOPED AMORPHOUS-CARBON - INFRARED OBSERVATION OF THE RAMAN-ACTIVE G-BANDS AND D-BANDS
    KAUFMAN, JH
    METIN, S
    SAPERSTEIN, DD
    [J]. PHYSICAL REVIEW B, 1989, 39 (18): : 13053 - 13060
  • [18] KUHN HG, 1969, ATOMIC SPECTRA, P317
  • [19] SUBPLANTATION MODEL FOR FILM GROWTH FROM HYPERTHERMAL SPECIES - APPLICATION TO DIAMOND
    LIFSHITZ, Y
    KASI, SR
    RABALAIS, JW
    [J]. PHYSICAL REVIEW LETTERS, 1989, 62 (11) : 1290 - 1293
  • [20] STRUCTURAL-PROPERTIES AND ELECTRONIC-STRUCTURE OF LOW-COMPRESSIBILITY MATERIALS - BETA-SI3N4 AND HYPOTHETICAL BETA-C3N4
    LIU, AY
    COHEN, ML
    [J]. PHYSICAL REVIEW B, 1990, 41 (15): : 10727 - 10734