Atomic layer epitaxy of copper -: Growth and selectivity in the Cu(II)-2,2,6,6-tetramethyl-3,5-heptanedionate/H2 process

The deposition of copper by means of atomic layer epitaxy is reported. Using Cu(II)-2,2,6,6-tetramethyl-3,5-heptanedionate as the precursor, pure and specular copper films were deposited at deposition temperatures below 200 degrees C. This is more than 150 degrees C lower than in previous reports for the same precursor where chemical vapor deposition has been employed. The process was self-limited in the temperature range 190 to 260 degrees C. Area-selective deposition was achieved on platinum seeded substrates vs. unseeded. glass slides or oxidized metal surfaces in the temperature range 175 to 300 degrees C. At higher temperatures, the selectivity was lost, and nucleation was independent of substrate material because of a thermal decomposition of the precursor.