A simple model for threshold voltage of surrounding-gate MOSFET's

被引：69

作者：

Auth, CP ^{[1
]}

Plummer, JD ^{[1
]}

机构：

[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 11期

关键词：

MOSFET; silicon;

D O I：

10.1109/16.726665

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a threshold voltage model for surrounding-gate MOSFET's, The model treats the ends and the double-gate regions of the channel as separate devices operating in parallel. The threshold voltage for the full device is obtained as the perimeter-weighted sum of the threshold voltages of the two parts enabling simple analytic threshold models to be used, Short channel effects and drain-induced barrier towering are also modeled in this manner.

引用

页码：2381 / 2383

页数：3

共 9 条

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