Analytical threshold voltage model for short channel n(+)-p(+) double-gate SOI MOSFET's

Solving a two-dimensional (2-D) Poisson equation in the channel region, we have developed models for short channel n(+)-p(+) double-gate SOI MOSFET's, and showed how to design a device with a decreased gate length, suppressing short channel threshold voltage shift Delta V-th and subthreshold swing (S-swing) degradation. According to our model, we can design a 0.05-mu m L(G) device of which threshold voltage is 0.2 V, Delta V-th is 25 mV, and S-swing is 65 mV/decade with a 3-nm-thick gate oxide and 12-nm-thick SOI.