Wafer bonding for microsystems technologies

被引:61
作者
Gösele, U
Tong, QY
Schumacher, A
Kräuter, G
Reiche, M
Plössl, A
Kopperschmidt, P
Lee, TH
Kim, WJ
机构
[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
[2] Duke Univ, Sch Engn, Wafer Bonding Lab, Durham, NC 27708 USA
关键词
wafer bonding; fusion bonding; pressure sensors; interface reactions; hydrophilic bonding; hydrophobic bonding;
D O I
10.1016/S0924-4247(98)00310-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In microsystems technologies, frequently complex structures consisting of structured or plain silicon or other wafers have to be joined to one mechanically stable configuration. In many cases, wafer bonding, also termed fusion bonding, allows to achieve this objective. The present overview will introduce the different requirements surfaces have to fulfill for successful bonding especially in the case of silicon wafers. Special emphasis is put on understanding the atomistic reactions at the bonding interface. This understanding has allowed the development of a simple low temperature bonding approach which allows to reach high bonding energies at temperatures as low as 150 degrees C. Implications for pressure sensors will be discussed as well as various thinning approaches and bonding of dissimilar materials. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:161 / 168
页数:8
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