Multiband quantum transport with Γ-Χ valley-mixing via evanescent states

被引：16

作者：

Ogawa, M ^{[1
]}

Sugano, T ^{[1
]}

Miyoshi, T ^{[1
]}

机构：

[1] Kobe Univ, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 657, Japan

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 7-8期

关键词：

D O I：

10.1016/S0038-1101(98)00064-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Calculations of quantum transport of electrons through heterostructures are presented based on an empirical tight-binding model where an evanescent-wave matching at a heterointerface as well as the Gamma-X valley-mixing effects are duly taken into account. Our results show, in particular, that current-voltage (I-V) characteristics of a GaAs/AlAs/GaAs single barrier diode have extra structures associated with the X valley tunneling, which can illustrate the experimental results. It should also be noted that the matching of evanescent electron modes is essentially necessary to include the valley-mixing effects for GaAs/AlAs heterostructures, since a lattice-translational symmetry is lacking in the growth direction in such structures. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1527 / 1532

页数：6

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