TUNNELING OF X-POINT ELECTRONS IN TRIPLE BARRIER DIODES

被引：1

作者：

NAKAGAWA, T

KOJIMA, T

OHTA, K

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90417-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：357 / 359

页数：3

共 8 条

[1] OBSERVATION OF RESONANT TUNNELING THROUGH GAAS QUANTUM-WELL STATES CONFINED BY AIA X-POINT BARRIERS [J].

BONNEFOI, AR ;

MCGILL, TC ;

BURNHAM, RD ;

ANDERSON, GB .

APPLIED PHYSICS LETTERS, 1987, 50 (06) :344-346

[2] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[3] TUNNELING THROUGH INDIRECT-GAP SEMICONDUCTOR BARRIERS [J].

MENDEZ, EE ;

CALLEJA, E ;

WANG, WI .

PHYSICAL REVIEW B, 1986, 34 (08) :6026-6029

[4] RESONANT TUNNELING VIA X-POINT STATES IN ALAS-GAAS-ALAS HETEROSTRUCTURES [J].

MENDEZ, EE ;

WANG, WI ;

CALLEJA, E ;

DASILVA, CETG .

APPLIED PHYSICS LETTERS, 1987, 50 (18) :1263-1265

[5] THERMALLY STIMULATED RESONANT CURRENT IN ALGAAS/GAAS TRIPLE BARRIER DIODES [J].

NAKAGAWA, T ;

FUJITA, T ;

MATSUMOTO, Y ;

KOJIMA, T ;

OHTA, K .

APPLIED PHYSICS LETTERS, 1987, 51 (06) :445-447

[6] OBSERVATION OF RESONANT TUNNELING IN ALGAAS/GAAS TRIPLE BARRIER DIODES [J].

NAKAGAWA, T ;

IMAMOTO, H ;

KOJIMA, T ;

OHTA, K .

APPLIED PHYSICS LETTERS, 1986, 49 (02) :73-75

[7] SHARP RESONANCE CHARACTERISTICS IN TRIPLE-BARRIER DIODES WITH A THIN UNDOPED SPACER LAYER [J].

NAKAGAWA, T ;

FUJITA, T ;

MATSUMOTO, Y ;

KOJIMA, T ;

OHTA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (06) :L980-L982

[8] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J].

SOLLNER, TCLG ;

GOODHUE, WD ;

TANNENWALD, PE ;

PARKER, CD ;

PECK, DD .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :588-590

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