THERMALLY STIMULATED RESONANT CURRENT IN ALGAAS/GAAS TRIPLE BARRIER DIODES

被引：11

作者：

NAKAGAWA, T

FUJITA, T

MATSUMOTO, Y

KOJIMA, T

OHTA, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 06期

关键词：

D O I：

10.1063/1.98417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：445 / 447

页数：3

共 8 条

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ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[2] EFFECTS OF SUBSTRATE TEMPERATURES ON THE DOPING PROFILES OF SI IN SELECTIVELY DOPED ALGAAS/GAAS/ALGAAS DOUBLE-HETEROJUNCTION STRUCTURES [J].

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SAKAKI, H ;

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YOSHIOKA, Y .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :973-975

[3] OBSERVATION OF RESONANT TUNNELING IN ALGAAS/GAAS TRIPLE BARRIER DIODES [J].

NAKAGAWA, T ;

IMAMOTO, H ;

KOJIMA, T ;

OHTA, K .

APPLIED PHYSICS LETTERS, 1986, 49 (02) :73-75

[4]

NAKAGAWA T, 1987, JPN J APPL PHYS, V26, P980

[5] EXCITED-STATE RESONANT TUNNELING IN GAAS-ALXGA1-XAS DOUBLE BARRIER HETEROSTRUCTURES [J].

REED, MA .

SUPERLATTICES AND MICROSTRUCTURES, 1986, 2 (01) :65-67

[6]

SCHEWCHUK TJ, 1985, APPL PHYS LETT, V46, P508

[7] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J].

SOLLNER, TCLG ;

GOODHUE, WD ;

TANNENWALD, PE ;

PARKER, CD ;

PECK, DD .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :588-590

[8]

TSUCHIYA M, 1986, APPL PHYS LETT, V49, P88, DOI 10.1063/1.97360

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