Nanocrystalline aluminum nitride and aluminum gallium nitride nanocomposites via transamination of [M(NMe2)3]2, M=Al, Al/Ga(1/1)

Reactions of [Al(NMe2)(3)](2) with NH3, mimicking the case of the related Ga-derivative, provided an Al-amide-imide precursor that was pyrolyzed to pure nanocrystalline AIN. Based on that chemistry, a mixed Al/Ga precursor system was designed to lead to the bimetallic nitride composites. A prototype study included equilibration in hexane or toluene of the dimers [M(NMe2)(3)](2), M = Al, Ga, which resulted in the formation of the homoleptic four-membered-ring compound (Me2N)(2)Al(mu-NMe2)(2)Ga(NMe2)(2). Crystalline [M(NMe2)(3)](2), M = Al/Ga (1/1), obtained from this equilibration was structurally characterized. Transamination/deamination reactions carried out with liquid NH3 in the preequilibrated bimetallic system [Al(NMe2)(3)](2)/[Ga(NMe2)(3)](2), Al/Ga = 1/1, resulted in the mixed M-amide-imide precursors that were converted at 700-1100 degrees C to aluminum/gallium nitride nanocomposite materials. The nature of these bulk nanocomposites has been elucidated by XRD, TEM/EDS, IR, and PL techniques.