Surface electronic properties of n- and p-type InGaN alloys

被引：14

作者：

King, P. D. C. ^{[1
]}

Veal, T. D. ^{[1
]}

Lu, Hai ^{[2
]}

Jefferson, P. H. ^{[1
]}

Hatfield, S. A. ^{[1
]}

Schaff, W. J. ^{[2
]}

McConville, C. F. ^{[1
]}

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[2] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2008年 / 245卷 / 05期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1002/pssb.200778452

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

X-ray photoemission spectroscopy is utilised to determine the variation in surface Fermi level pinning across the composition range of n- and p-type c-plane In(x)Ga(1-x)N alloys. The pinning relative to the charge neutrality level is used to explain a change in band bending direction causing a transition from surface electron accumulation (In rich) to depletion (Ga-rich), at x approximate to 0.43 for n-type alloys and a transition from surface inversion to hole depletion at x approximate to 0.59 for p-type alloys where downward band bending occurs across the composition range. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：881 / 883

页数：3

共 13 条

[11] Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001)
Tracy, KM
Mecouch, WJ
Davis, RF
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[12] Microscopic origins of surface states on nitride surfaces
Van de Walle, Chris G.
Segev, David
[J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (08)
[13] Transition from electron accumulation to depletion at InGaN surfaces
Veal, T. D.
Jefferson, P. H.
Piper, L. F. J.
McConville, C. F.
Joyce, T. B.
Chalker, P. R.
Considine, L.
Lu, Hai
Schaff, W. J.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (20)

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