Transition from electron accumulation to depletion at InGaN surfaces

被引：87

作者：

Veal, T. D. ^{[1
]}

Jefferson, P. H.

Piper, L. F. J.

McConville, C. F.

Joyce, T. B.

Chalker, P. R.

Considine, L.

Lu, Hai

Schaff, W. J.

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[2] Univ Liverpool, Dept Mat Sci & Engn, Liverpool L69 3BX, Merseyside, England

[3] Thomas Swan & Co Ltd, Cambridge CB2 5NX, England

[4] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 20期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2387976

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The composition dependence of the Fermi-level pinning at the oxidized (0001) surfaces of n-type InxGa1-xN films (0 <= x <= 1) is investigated using x-ray photoemission spectroscopy. The surface Fermi-level position varies from high above the conduction band minimum (CBM) at InN surfaces to significantly below the CBM at GaN surfaces, with the transition from electron accumulation to depletion occurring at approximately x=0.3. The results are consistent with the composition dependence of the band edges with respect to the charge neutrality level. (c) 2006 American Institute of Physics.

引用

页数：3

共 26 条

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