Direct growth of Al nanowire arrays: Thermal expansion and field emission properties

被引:26
作者
Li, Liang [1 ]
Xu, Xijin [2 ]
Chew, Hanguan [3 ]
Huang, Xiaohu [1 ]
Dou, Xincun [1 ]
Pan, Shusheng [1 ]
Li, Guanghai [1 ]
Zhang, Lide [1 ]
机构
[1] Chinese Acad Sci, Anhui Key Lab Nanomat & Nanotechnol, Inst Solid State Phys, Hefei 230031, Peoples R China
[2] Nanyang Technol Univ, Nanoelectron Lab, Sch Elect & Elect Engn, Singapore, Singapore
[3] Chartered Semicond Mfg Ltd, Singapore, Singapore
关键词
D O I
10.1021/jp710230c
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The Al nanowire arrays. were directly deposited on the Si substrates by a facile electron-beam evaporation technique, oblique angle deposition. This process was accomplished by tilting the Si substrates and adjusting the incident angle of evaporated Al vapor flux from the normal of the substrates at 87 degrees. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy observations indicate that large-area and single-crystalline Al nanowire arrays are effectively fabricated. In situ high-temperature X-ray diffraction measurements show that Al nanowires have a smaller lattice constant and smaller thermal expansion coefficient compared with the Al film. The thermal expansion mechanism was discussed in detail. Our field emission results show that the Al nanowires might be potential field emitters in the future nanodevices.
引用
收藏
页码:5328 / 5332
页数:5
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