A new conduction mechanism for the anomalous cells in thin oxide Flash EEPROMs

被引：56

作者：

Modelli, A ^{[1
]}

Gilardoni, F ^{[1
]}

Ielmini, D ^{[1
]}

Spinelli, AS ^{[1
]}

机构：

[1] STMicroelectronics, Cent R&D, Agrate Brianza, Italy

来源：

39TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2001 | 2001年

关键词：

flash memories; SILC; data retention;

D O I：

10.1109/RELPHY.2001.922883

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature dependence of the anomalous leakage current in the tail cells of flash memory is investigated on arrays with different oxide thickness. It is shown that both the conduction mechanism and the annealing kinetics of the leakage current change when the thickness is reduced below about 8 nm, becoming independent of temperature. The microscopic conduction of the tail cells is analyzed to investigate the conduction model in thin oxides.

引用

页码：61 / 66

页数：6

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