The fabrication of patternable silicon nanotips using deep reactive ion etching

被引:50
作者
Kang, Chang Kun [1 ]
Lee, Sang Min [2 ]
Jung, Im Deok [2 ]
Jung, Phill Gu [1 ]
Hwang, Sung Jin [1 ]
Ko, Jong Soo [1 ,2 ]
机构
[1] Pusan Natl Univ, Grad Sch Mech Engn, Pusan 609735, South Korea
[2] Pusan Natl Univ, Interdisciplinary Program Microelectromech Syst, Pusan 609735, South Korea
关键词
D O I
10.1088/0960-1317/18/7/075007
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 [电气工程]; 0809 [电子科学与技术];
摘要
This paper presents a novel fabrication method of patternable silicon nanotips. The proposed fabrication method involves four steps: lithography, the first deep reactive ion etching (DRIE), removal of the photoresist and the second DRIE. The fabricated silicon nanotips are well aligned along the edges of microstructures. The plane shape of the microstructure was determined by the patterned shape of the photoresist. It means that the silicon nanotips can be patterned by the patterned shape of the photoresist. The width of the nanotips, 1 mu m below the top, was measured to be about 200 nm. The fabricated nanotips were applied to modify the surface of silicon from hydrophilic to superhydrophobic. The contact angle was drastically increased from 79.7 degrees (bare silicon surface) to 158.3 degrees (surface modified with nanotips). Therefore, the surface was modified from hydrophilic to superhydrophobic.
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页数:7
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