Relation between 1/f noise and frequency-independent loss tangent

被引：3

作者：

Kleinpenning, TGM ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Elect Engn, NL-5600 MB Eindhoven, Netherlands

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1998年 / 10卷 / 19期

关键词：

D O I：

10.1088/0953-8984/10/19/012

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A new model has been proposed, which relates the 1/f noise in semiconductors to the frequency independent loss tangent in dielectrics. It is demonstrated that this model can explain Hooge's empirical 1/f noise relation. The theoretical results are in agreement with experimental results. The model supports the opinion that 1/f noise is caused by mobility fluctuations.

引用

页码：4245 / 4256

页数：12

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