Radiation-induced dark current increase in CMOS Active Pixel Sensors

被引：11

作者：

Bogaerts, J ^{[1
]}

Dierickx, B ^{[1
]}

Van Hoof, C ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

PHOTONICS FOR SPACE ENVIRONMENTS VII | 2000年 / 4134卷

关键词：

CMOS image sensors; APS; dark current; radiation; total ionizing dose; proton damage;

D O I：

10.1117/12.405333

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

In this paper we discuss the dark current increase in CMOS Active Pixel Sensors (APS) due to total dose and proton induced damage. We describe measurement results on several diodes that were used to investigate the degradation of the pixel photodiode under ionizing radiation. This study resulted in the design of radiation tolerant pixels that have proven to tolerate at least 200 kGy(Si) total dose from a Co-60 source. Standard APS sensors show already large degradation after less than 100 Gy(Si) due to a strong surface leakage current increase. Standard CMOS imagers were also evaluated with respect to proton induced damage. Highly energetic protons can displace atoms from their lattice position, giving rise to an increase in mean level of dark current and non-uniformity.

引用

页码：105 / 114

页数：10

共 27 条

[21] GENERATION OF INTERFACE STATES BY IONIZING-RADIATION IN VERY THIN MOS OXIDES [J].