Influence of SiO2 and Si3N4 passivation on AlGaN/GaN/Si HEMT performance

被引：27

作者：

Javorka, P ^{[1
]}

Bernát, J ^{[1
]}

Fox, A ^{[1
]}

Marso, M ^{[1
]}

Lüth, H ^{[1
]}

Kordos, P ^{[1
]}

机构：

[1] Inst Thin Films & Interfaces, Res Ctr Julich, D-52425 Julich, Germany

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 15期

关键词：

D O I：

10.1049/el:20030748

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Different influence Of SiO2 and SO4 passivation on performance of AlGaN/GaN/Si HEMTs is reported. DC characteristics are less enhanced by using SiO2 than Si3N4. This is in agreement with carrier concentration changes after passivation, as follows from Hall data. Small signal RF performance is degraded after applying SiO2 and enhanced after Si3N4 passivation, e.g. for unpassivated devices f(T) congruent to 17 GHz which decreased to 9 GHz and increased to 28 GHz for SiO2 and Si3N4 respectively The f(max)/f(T) ratio has not changed after passivation.

引用

页码：1155 / 1157

页数：3

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