Long-wavelength (1.55-μm) vertical-cavity lasers with InGaAsP/InP-GaAs/AlAs DBR's by wafer fusion

被引：27

作者：

Ohiso, Y ^{[1
]}

Amano, C ^{[1
]}

Itoh, Y ^{[1
]}

Takenouchi, H ^{[1
]}

Kurokawa, T ^{[1
]}

机构：

[1] NTT, Optoelect Labs, Atsugi, Kanagawa 24301, Japan

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1998年 / 34卷 / 10期

关键词：

long-wavelength vertical-cavity lasers; wafer fusion;

D O I：

10.1109/3.720226

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a novel design for a 1.55-mu m vertical-cavity surface-emitting laser (VCSEL) structure employing double InGaAs/InP-GaAs/AlAs distributed Bragg reflectors. The fundamental features of InP/GaAs wafer fusion are examined as a function of load pressure. We demonstrate an exact 1.55-mu m emission wavelength in the CW mode with low threshold voltage (2.1 V) and low threshold current density (1.8 kA/cm(2)).

引用

收藏

页码：1904 / 1913

页数：10

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