Single photon emission from silicon-vacancy colour centres in chemical vapour deposition nano-diamonds on iridium

被引：393

作者：

Neu, Elke ^{[1
]}

Steinmetz, David ^{[1
]}

Riedrich-Moeller, Janine ^{[1
]}

Gsell, Stefan ^{[2
]}

Fischer, Martin ^{[2
]}

Schreck, Matthias ^{[2
]}

Becher, Christoph ^{[1
]}

机构：

[1] Univ Saarland, D-66123 Saarbrucken, Germany

[2] Univ Augsburg, Lehrstuhl Expt Phys 4, D-86135 Augsburg, Germany

来源：

NEW JOURNAL OF PHYSICS | 2011年 / 13卷

关键词：

LUMINESCENCE CENTER; SPECTROSCOPY; FLUORESCENCE;

D O I：

10.1088/1367-2630/13/2/025012

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We introduce a process for the fabrication of high-quality, spatially isolated nano-diamonds on iridium via microwave-plasma-assisted chemical vapour deposition (CVD) growth. We perform spectroscopy of single siliconvacancy (SiV) centres produced during the growth of the nano-diamonds. The colour centres exhibit extraordinary narrow zero-phonon-lines down to 0.7 nm at room temperature. Single photon count rates up to 4.8 Mcps at saturation make these SiV centres the brightest diamond-based single photon sources to date. We measure for the first time the fine structure of a single SiV centre, thus confirming the atomic composition of the investigated colour centres.

引用

页数：21

共 43 条

[31] Growth and characterization of Si-doped diamond single crystals grown by the HTHP method [J].