Identification of the tetra-interstitial in silicon

被引：66

作者：

Coomer, BJ ^{[1
]}

Goss, JP

Jones, R

Öberg, S

Briddon, PR

机构：

[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England

[2] Univ Lulea, Dept Math, S-97187 Lulea, Sweden

[3] Univ Newcastle Upon Tyne, Dept Phys, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2001年 / 13卷 / 01期

关键词：

D O I：

10.1088/0953-8984/13/1/101

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

First-principles computational methods are employed to investigate the structural, vibrational, optical and electronic properties of the self-interstitial aggregate, I-4 in silicon. We find the defect to be electrically active and identify it with the B3 EPR centre. We also show that its properties are consistent with DLTS and optical spectra observed following implantation of silicon.

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页码：L1 / L7

页数：7

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