Growth of (100)-oriented LaNiO3 thin films directly on Si substrates by a simple metalorganic decomposition technique for the highly oriented PZT thin films

被引:61
作者
Meng, XJ [1 ]
Cheng, JG [1 ]
Sun, JL [1 ]
Ye, HJ [1 ]
Guo, SL [1 ]
Chu, JH [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
基金
中国国家自然科学基金;
关键词
LaNiO3; orientation; PZT thin films; hysteresis loop;
D O I
10.1016/S0022-0248(00)00742-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
LaNiO3 (LNO) thin films directly on Si (100) substrates were prepared by a simple metalorganic decomposition (MOD) technique at annealing temperatures ranging from 450 degreesC to 650 degreesC using a rapid thermal annealing (RTA) method. Highly (100)-oriented LNO thin films were obtained at low annealing temperature of 550 degreesC. The results indicate the LNO film annealed at 600 degreesC exhibits good metallic property, which is comparable with the LNO films derived from physical techniques. A subsequent deposition of sol-gel derived Pb(Zr0.52Ti0.48)O-3 (PZT52/48) thin film on the LNO-coated Si substrate was also found to have a (100)-oriented texture. The ferroelectric capacitor derived from these films displayed a good P-E hysteresis characteristic. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:100 / 104
页数:5
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