Growth of (100)-oriented LaNiO3 thin films directly on Si substrates by a simple metalorganic decomposition technique for the highly oriented PZT thin films

LaNiO3 (LNO) thin films directly on Si (100) substrates were prepared by a simple metalorganic decomposition (MOD) technique at annealing temperatures ranging from 450 degreesC to 650 degreesC using a rapid thermal annealing (RTA) method. Highly (100)-oriented LNO thin films were obtained at low annealing temperature of 550 degreesC. The results indicate the LNO film annealed at 600 degreesC exhibits good metallic property, which is comparable with the LNO films derived from physical techniques. A subsequent deposition of sol-gel derived Pb(Zr0.52Ti0.48)O-3 (PZT52/48) thin film on the LNO-coated Si substrate was also found to have a (100)-oriented texture. The ferroelectric capacitor derived from these films displayed a good P-E hysteresis characteristic. (C) 2000 Elsevier Science B.V. All rights reserved.