Temperature-dependent luminescence dynamics in ZnO nanorods

被引:41
作者
Priller, H
Hauschild, R
Zeller, J
Klingshirn, C
Kalt, H
Kling, R
Reuss, F
Kirchner, C
Waag, A
机构
[1] Univ Karlsruhe, Inst Angew Phys, D-76131 Karlsruhe, Germany
[2] Ctr Funct Nanostruct, D-76131 Karlsruhe, Germany
[3] Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany
[4] Tech Univ Braunschweig, Inst Halbleitertech, D-38106 Braunschweig, Germany
关键词
PL; time-resolved photoluminescence; II-VI semiconductors; decay time;
D O I
10.1016/j.jlumin.2004.09.020
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report on an experimental study of the temporal photoluminescence dynamics of high-quality ZnO nanopillars from 10 K to room temperature. We find that defect states play an important role in the time evolution of the photoluminescence signal. At low excitation intensities capture into defects dominates the time dependence of the PL, at higher intensities they are saturated and the intrinsic excitation decay is observed. We separate the intrinsic exciton decay from the fast nonlinear M-band with the method of decay associated spectra and obtain the temperature dependence of the intrinsic exciton decay. High excitation measurements show a reduced exciton-exciton scattering in these thin nanorods. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:173 / 176
页数:4
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