Recombination dynamics in dry-etched (Cd,Zn)Se/ZnSe nanostructures: Influence of exciton localization

被引：13

作者：

Herz, K ^{[1
]}

Bacher, G

Forchel, A

Straub, H

Brunthaler, G

Faschinger, W

Bauer, G

Vieu, C

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

[2] Univ Linz, Inst Halbleiterphys, A-4040 Linz, Austria

[3] CNRS, Microstruct & Microelect Lab, F-92225 Bagneux, France

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.59.2888

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of exciton localization on the recombination dynamics in dry etched (Cd,Zn)Se/ZnSe wires and dots has been studied using time-resolved photoluminescence spectroscopy. The observed size and temperature dependence of the excitonic lifetime can be explained quantitatively taking into account the interplay between nonradiative carrier loss at the sidewalls and trapping of free excitons into localized states. From the data, a density of localized states N-L= 7 x 10(8) cm(-2) and an average localization energy E-A= 2.8 meV can be deduced. [S0163-1829(99)13703-2].

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页码：2888 / 2893

页数：6

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