PHOTOLUMINESCENCE IN ZNSE-BASED QUANTUM-WELL WIRE STRUCTURES

被引：21

作者：

DING, J

NURMIKKO, AV

GRILLO, DC

HE, L

HAN, J

GUNSHOR, RL

机构：

[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

[2] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 16期

关键词：

D O I：

10.1063/1.110544

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated quantum well wire structures by using electron beam lithography and reactive ion etching techniques on (Zn,Cd)Se/Zn(S,Se) multiple quantum well structures. Photoluminescence efficiencies have been studied as a function of the wire width (down to about 400 angstrom), and temperature. The results indicate that the sidewall surfaces exposed during the dry etching play an important role in providing nonradiative centers for the optically injected carriers, strongly diminishing the radiative efficiencies in the smallest structures.

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页码：2254 / 2256

页数：3

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