CORRELATION BETWEEN THE EXCITON MOBILITY AND THE EXCITONIC LINEWIDTH IN SHALLOW INXGA1-XAS/GAAS QUANTUM-WELLS

被引：10

作者：

BACHER, G ^{[1
]}

SCHWEIZER, H ^{[1
]}

KOVAC, J ^{[1
]}

NICKEL, H ^{[1
]}

SCHLAPP, W ^{[1
]}

LOSCH, R ^{[1
]}

机构：

[1] FTZ RES INST,W-6100 DARMSTADT,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 06期

关键词：

D O I：

10.1063/1.107827

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using time-resolved photoluminescence (PL) spectroscopy with high spatial (0.1-mu-m an temporal (50 ps) resolution, we have investigated exciton scattering in a set of strained InxGa1-xAs/GaAs quantum wells as a function of well width L(z) and In content x. Summarizing the results, a strong correlation between the exciton mobility and the emission linewidth (LW) is found: High mobilities correspond to small luminescence LWs, indicating reduced exciton scattering. From the dependence of the excitonic mobility on temperature and In content x, we conclude, that interface roughness scattering and alloy scattering, respectively, are the dominant processes controlling the mobility as well as the PL LW at low temperatures.

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页码：702 / 704

页数：3

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