Effect of growth parameters on crystallinity and properties of ZnO films grown by plasma assisted MOCVD

被引：11

作者：

Losurdo, M.

Giangregorio, M. M.

Sacchetti, A.

Capezzuto, P.

Bruno, G.

Malandrino, G.

Fragala, I. L.

机构：

[1] CNR, INSTM, Inst Inorgan Methodol & Plasmas, UdR Bari, I-70126 Bari, Italy

[2] Univ Catania, Dipartimento Sci Chim, INSTM, I-95125 Catania, Italy

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2007年 / 42卷 / 1-6期

关键词：

ZnO; PA-MOCVD; ellipsometry;

D O I：

10.1016/j.spmi.2007.04.040

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Thin films of ZnO have been grown by plasma assisted metal-organic chemical vapour deposition (PAMOCVD) using a 13.56 MHz O-2 plasma and the Zn(TTA)(2) center dot e tmed (HTTA = 2-thenoyltrifluoroacetone, TMED = N, N, N', N'-tetramethylethylendiamine) precursor. The effects of growth parameters such as the plasma activation, the substrate, the surface temperature, and the ratio of fluxes of precursors on the structure, morphology, and optical and electrical properties of ZnO thin films have been studied. Under a very low plasma power of 20 W, c-axis oriented hexagonal ZnO thin films are grown on hexagonal sapphire (0001), cubic Si(001) and amorphous quartz substrates. The substrate temperature mainly controls grain size. (c) 2007 Elsevier Ltd. All rights reserved.

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页码：40 / 46

页数：7

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