Characteristics of oriented LaNiO3 thin films fabricated by the sol-gel method

被引：56

作者：

Miyake, S ^{[1
]}

Fujihara, S ^{[1
]}

Kimura, T ^{[1
]}

机构：

[1] Keio Univ, Fac Sci & Technol, Dept Appl Chem, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2001年 / 21卷 / 10-11期

关键词：

CeO2; electrical conductivity; films; perovskites; sol-gel processes;

D O I：

10.1016/S0955-2219(01)00056-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We fabricated LaNiO3 (LNO) thin films on SiO2 glass, (100) SrTiO3 (STO), (100) Si and CeO2-covered (100) Si substrates by the sol-gel method. The deposited films were heat-treated at 700 degreesC with various conditions, duration and atmosphere. Preferentially (100)-oriented, polycrystalline LNO films were obtained on STO and Si. It was also found that orientated films could be formed even On SiO2 glass and CeO2-covered (100) Si substrates by altering the heating process. We investigated a relationship between the resistance and the crystallite size of the LNO films. The sheet resistance of LNO decreased with increasing crystallite size of LNO. The resistivity and sheet resistance of LNO/STO at 300 K were 340 mu Omega (.)cm and 33.8 Omega/square, respectively, and those values of LNO/CeO2/Si at 300 K were 460 mu Omega (.)cm and 28.8 Omega/square. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：1525 / 1528

页数：4

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