Photoemission studies of graphene on SiC: Growth, interface, and electronic structure

被引：24

作者：

Bostwick, A. ^{[1
]}

Emtsev, K. V. ^{[2
]}

Horn, K. ^{[3
]}

Huwald, E. ^{[4
]}

Ley, L. ^{[2
]}

McChesney, J. L. ^{[2
]}

Ohta, T. ^{[1
,3
]}

Riley, J. ^{[4
]}

Rotenberg, E. ^{[1
]}

Speck, F. ^{[2
]}

Seyller, Th. ^{[2
]}

机构：

[1] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA USA

[2] Univ Erlangen Nurnberg, Lehrstuhl Tech Phys, Nurnberg, Germany

[3] Fritz Haber Inst, Abt Molphys, Berlin, Germany

[4] La Trobe Univ, Dept Phys, Melbourne, Vic, Australia

来源：

ADVANCES IN SOLID STATE PHYSICS | 2008年 / 47卷

关键词：

D O I：

10.1007/978-3-540-74325-5_13

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The possibility to grow well ordered graphitic films on SiC(0001) surfaces with thicknesses down to a single graphene layer is promising for future applications. Photoelectron spectroscopy (PES) is a versatile technique for investigating a variety of fundamentals and technologically relevant properties of this system. We survey results from recent PES studies with a focus on the growth of graphene and few layer graphene, the electronic and structural properties of the interface to the SiC substrate, and the electronic structure of the films.

引用

页码：159 / +

页数：3