Transport properties of two-dimensional electron gases containing InAs self-assembled dots

被引：42

作者：

Kim, GH ^{[1
]}

Ritchie, DA ^{[1
]}

Pepper, M ^{[1
]}

Lian, GD ^{[1
]}

Yuan, J ^{[1
]}

Brown, LM ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 17期

关键词：

D O I：

10.1063/1.122484

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a study of the transport properties of two-dimensional electron gases formed in GaAs/AlGaAs heterostructures in which InAs self-assembled quantum dots have been inserted in the center of a GaAs quantum well. We observed that, while maintaining a constant carrier density, the mobility increased as the InAs dot density was reduced. The ratio of the transport to the quantum lifetime was measured to be approximately five with the dominant scattering mechanism attributed to short-range scattering from the inserted InAs dots. (C) 1998 American Institute of Physics. [S0003-6951(98)01843-9].

引用

页码：2468 / 2470

页数：3

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