Electron emission from nitrogen-doped chemical vapour deposited diamond

被引：9

作者：

Okano, K ^{[1
]}

Hiraki, A

Yamada, T

Koizumi, S

Itoh, J

机构：

[1] Kochi Univ Technol, Dept Elect & Photon Syst Engn, Kochi 782, Japan

[2] Tokai Univ, Dept Elect, Hiratsuka, Kanagawa 25912, Japan

[3] Natl Inst Res Inorgan Mat, Tsukuba, Ibaraki 305, Japan

[4] Electrotech Lab, Tsukuba, Ibaraki 305, Japan

来源：

ULTRAMICROSCOPY | 1998年 / 73卷 / 1-4期

关键词：

D O I：

10.1016/S0304-3991(97)00134-4

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

We have used urea ((NH2)(2)CO) as a dopant and grown N-doped polycrystalline diamond using hot filament chemical vapor deposition (HFCVD) technique, and in addition, the mold-based technique is used in order to obtain the pyramidal-shape array structure. Both polycrystalline films and pyramidal-shape array are identified as diamond from the results of Auger electron spectroscopy (AES) and Raman spectroscopy. The nitrogen concentrations of the film are evaluated using Rutherford backscattering(RBS) technique and it is found to be about 10(20) cm(-3). A turn-on field as low as 0.5 V/mu m in the emission properties has been confirmed and the emission current fluctuations are discussed. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：43 / 49

页数：7

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