Characterization of spray deposited bismuth oxide thin films and their thermal conversion to bismuth silicate

被引：39

作者：

Rico-Fuentes, O

Sánchez-Aguilera, E

Velasquez, C

Ortega-Alvarado, R

Alonso, JC

Ortiz, A

机构：

[1] Univ Nacl Autonoma Mexico, Inst Invest Mat, Mexico City 04510, DF, Mexico

[2] Univ Iberoamer Prol P Reforma, Dept Fis & Matemat, Alvaro Obregon 01210, DF, Mexico

[3] Univ Autonoma Metropolitana Iztapalapa, Dept Quim, Mexico City 09340, DF, Mexico

[4] Univ Nacl Autonoma Mexico, Fac Ciencias, Mexico City 04510, DF, Mexico

来源：

THIN SOLID FILMS | 2005年 / 478卷 / 1-2期

关键词：

insulators; dielectric properties; pyrolysis; oxides;

D O I：

10.1016/j.tsf.2004.10.013

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

Bismuth oxide films deposited by spray pyrolysis, using bismuth acetate or bismuth chloride, onto clear fused quartz and single crystalline silicon substrates were thermally converted into bismuth silicate compounds. Bismuth silicate compounds' chemical compositions depend on the annealing temperature; Bi2SiO5 is obtained at 600 degrees C and Bi4Si3O12 is produced at 750 degrees C. Forbidden energy optical band gap increases from 3.78 eV for as-deposited films up to 4.89 eV for annealed films. Current densities of 10(-6) A/cm(2), in metal-insulator-semiconductor (MIS) structures, are observed for Bi2SiO5 films at applied electric fields 300 kV/cm and for Bi4Si3O12, films for 2.5 MV/cm. A value of the order of 10.6 was calculated for the apparent dielectric constant of the specimen obtained by annealing at 800 degrees C. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：96 / 102

页数：7

共 25 条

[1]

Raman characterization of Bi12SiO20 thin films obtained by pulsed laser deposition [J].