Atomic-resolution quantitative composition analysis using scanning transmission electron microscopy Z-contrast experiments

被引:60
作者
Carlino, E [1 ]
Grillo, V [1 ]
机构
[1] INFM, Lab Nazl TASC, I-34012 Trieste, Italy
关键词
D O I
10.1103/PhysRevB.71.235303
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Here a general approach to measure quantitatively with atomic resolution the distribution of a chemical species in a host matrix is derived and applied to a case study consisting of a layer of Si buried in a GaAs matrix. Simulations and experiments performed on Si/GaAs superlattices demonstrate a quasilinear dependence of the high-angle annular dark-field image intensity on the concentration of Si in the GaAs matrix. The results have been compared with those obtained by cross-sectional scanning tunneling microscopy on the same specimens.
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页数:8
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