Atomic-resolution quantitative composition analysis using scanning transmission electron microscopy Z-contrast experiments

被引：60

作者：

Carlino, E ^{[1
]}

Grillo, V ^{[1
]}

机构：

[1] INFM, Lab Nazl TASC, I-34012 Trieste, Italy

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.71.235303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Here a general approach to measure quantitatively with atomic resolution the distribution of a chemical species in a host matrix is derived and applied to a case study consisting of a layer of Si buried in a GaAs matrix. Simulations and experiments performed on Si/GaAs superlattices demonstrate a quasilinear dependence of the high-angle annular dark-field image intensity on the concentration of Si in the GaAs matrix. The results have been compared with those obtained by cross-sectional scanning tunneling microscopy on the same specimens.

引用

页数：8

共 38 条

[1]

[Anonymous], PHYS REV B

[2] Limitations on the s-state approach to the interpretation of sub-angstrom resolution electron microscope images and microanalysis [J].