Current transport mechanisms in low resistive CdS thin films

被引：26

作者：

Gunal, I

Parlak, M

机构：

[1] Department of Physics, Middle East Technical University

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1997年 / 8卷 / 01期

关键词：

D O I：

10.1023/A:1018540601482

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The current transport mechanisms in polycrystalline CdS thin films have been studied as a function of temperature over the temperature range 20-230 K. Conductivity data for the high temperature region has been analysed using Seto's model of thermionic emission. At intermediate temperatures it was found that thermionic emission and tunnelling of carriers through the potential barrier both contribute to the conductivity. Below 100 K Mott's hopping process appears to be the predominant conduction mechanism.

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页码：9 / 13

页数：5

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