Shape memory effect in Cu nanowires

被引:234
作者
Liang, WW
Zhou, M [1 ]
Ke, FJ
机构
[1] Georgia Inst Technol, George W Woodruff Sch Mech Engn, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
[2] Beijing Univ Aeronaut & Astronaut, Dept Phys, Beijing 100083, Peoples R China
关键词
D O I
10.1021/nl0515910
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A rubber-like pseudoelastic behavior is discovered in single-crystalline face-centered-cubic (FCC) Cu nanowires in atomistic simulations. Nonexistent in bulk Cu, this phenomenon is associated primarily with a reversible crystallographic lattice reorientation driven by the high surface-stress-incluced internal stresses due to high surf ace-to-volume ratios at the nanoscale level. The temperature-dependence of this behavior leads to a shape memory effect (SME). Under tensile loading and unloading, the nanowires exhibit recoverable strains up to over 50%, well beyond the typical recoverable strains of 5-8% for most bulk shape memory alloys (SMAs). This behavior is well-defined for wires between 1.76 and 3.39 nm in size over the temperature range of 100-900 K.
引用
收藏
页码:2039 / 2043
页数:5
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