Very fast light-induced degradation of a-Si:H/c-Si(100) interfaces

被引：70

作者：

De Wolf, Stefaan ^{[1
]}

Demaurex, Benedicte ^{[1
]}

Descoeudres, Antoine ^{[1
]}

Ballif, Christophe ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Microengn IMT, Photovolta & Thin Film Elect Lab, CH-2000 Neuchatel, Switzerland

来源：

PHYSICAL REVIEW B | 2011年 / 83卷 / 23期

关键词：

SURFACE-RECOMBINATION; AMORPHOUS-SILICON; METASTABLE DEFECTS; HYDROGEN; CREATION; VOLTAGE;

D O I：

10.1103/PhysRevB.83.233301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Light-induced degradation (LID) of crystalline silicon (c-Si) surfaces passivated with hydrogenated amorphous silicon (a-Si:H) is investigated. The initial passivation decays on polished c-Si(100) surfaces on a time scale much faster than usually associated with bulk a-Si:H LID. This phenomenon is absent for the a-Si:H/c-Si(111) interface. We attribute these differences to the allowed reconstructions on the respective surfaces. This may point to a link between the presence of so-called "fast" states and (internal) surface reconstruction in bulk a-Si:H.

引用

收藏

页数：4

相关论文

共 35 条

[1] Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge [J].

Agostinelli, G. ;

Delabie, A. ;

Vitanov, P. ;

Alexieva, Z. ;

Dekkers, H. F. W. ;

De Wolf, S. ;

Beaucarne, G. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2006, 90 (18-19) :3438-3443

[2] MICROSTRUCTURE AND THE LIGHT-INDUCED METASTABILITY IN HYDROGENATED AMORPHOUS-SILICON [J].

BHATTACHARYA, E ;

MAHAN, AH .

APPLIED PHYSICS LETTERS, 1988, 52 (19) :1587-1589

[3] HYDROGENATED MICROVOIDS AND LIGHT-INDUCED DEGRADATION OF AMORPHOUS-SILICON SOLAR-CELLS [J].

CARLSON, DE .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 41 (04) :305-309

[4] Abruptness of a-Si:H/c-Si interface revealed by carrier lifetime measurements [J].

De Wolf, Stefaan ;

Kondo, Michio .

APPLIED PHYSICS LETTERS, 2007, 90 (04)

[5] Nature of doped a-Si:H/c-Si interface recombination [J].

De Wolf, Stefaan ;

Kondo, Michio .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (10)

[6] Stretched-exponential a-Si:H/c-Si interface recombination decay [J].

De Wolf, Stefaan ;

Olibet, Sara ;

Ballif, Christophe .

APPLIED PHYSICS LETTERS, 2008, 93 (03)

[7] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J].

DERSCH, H ;

STUKE, J ;

BEICHLER, J .

APPLIED PHYSICS LETTERS, 1981, 38 (06) :456-458

[8] The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality [J].

Descoeudres, A. ;

Barraud, L. ;

Bartlome, R. ;

Choong, G. ;

De Wolf, Stefaan ;

Zicarelli, F. ;

Ballif, C. .

APPLIED PHYSICS LETTERS, 2010, 97 (18)

[9] PI-BONDED DIMERS, PREFERENTIAL PAIRING, AND 1ST-ORDER DESORPTION-KINETICS OF HYDROGEN ON SI(100)-(2X1) [J].

DEVELYN, MP ;

YANG, YML ;

SUTCU, LF .

JOURNAL OF CHEMICAL PHYSICS, 1992, 96 (01) :852-855

[10] Development in understanding and controlling the Staebler-Wronski effect in a-Si:H [J].

Fritzsche, H .

ANNUAL REVIEW OF MATERIALS RESEARCH, 2001, 31 :47-79

← 1 2 3 4 →