The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality

被引：83

作者：

Descoeudres, A. ^{[1
]}

Barraud, L. ^{[1
]}

Bartlome, R. ^{[1
]}

Choong, G. ^{[1
]}

De Wolf, Stefaan ^{[1
]}

Zicarelli, F. ^{[1
]}

Ballif, C. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Photovolta & Thin Film Elect Lab, Inst Microengn IMT, CH-2000 Neuchatel, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 18期

关键词：

MICROCRYSTALLINE SILICON; CRYSTALLINE SILICON; SOLAR-CELLS; PLASMAS; SPECTROSCOPY; RF; DEPOSITION; TRANSITION; PHYSICS;

D O I：

10.1063/1.3511737

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In silicon heterojunction solar cells, thin amorphous silicon layers passivate the crystalline silicon wafer surfaces. By using in situ diagnostics during plasma-enhanced chemical vapor deposition (PECVD), the authors report how the passivation quality of such layers directly relate to the plasma conditions. Good interface passivation is obtained from highly depleted silane plasmas. Based upon this finding, layers deposited in a large-area very high frequency (40.68 MHz) PECVD reactor were optimized for heterojunction solar cells, yielding aperture efficiencies up to 20.3% on 4 cm(2) cells. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3511737]

引用

页数：3

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