Abruptness of a-Si:H/c-Si interface revealed by carrier lifetime measurements

被引：191

作者：

De Wolf, Stefaan ^{[1
]}

Kondo, Michio ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, AIST, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 04期

关键词：

D O I：

10.1063/1.2432297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Intrinsic hydrogenated amorphous silicon films can yield outstanding electronic surface passivation of crystalline silicon wafers. In this letter the authors confirm that this is strongly determined by the abruptness of the interface. For completely amorphous films the passivation quality improves by annealing at temperatures up to 260 degrees C, most likely by film relaxation. This is different when an epitaxial layer has been grown at the interface during film deposition. Annealing is in such a case detrimental for the passivation. Consequently, the authors argue that annealing followed by carrier lifetime measurements allows determining whether the interface is abrupt. (c) 2007 American Institute of Physics.

引用

页数：3

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