a-Si:H/c-Si heterointerface formation and epitaxial growth studied by real time optical probes

被引：19

作者：

Gielis, J. J. H. ^{[1
]}

van den Oever, P. J. ^{[1
]}

van de Sanden, M. C. M. ^{[1
]}

Kessels, W. M. M. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 20期

关键词：

D O I：

10.1063/1.2740474

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The deposition of amorphous and epitaxial silicon thin films on H-terminated Si(100) has been studied in real time by the simultaneous application of spectroscopic ellipsometry, attenuated total reflection infrared spectroscopy, and optical second-harmonic generation. The morphology development of the films could be monitored nonintrusively in terms of critical point resonances and H bonding resolving the abruptness of the film-substrate interface and providing a clear distinction between direct heterointerface formation, nanometer-level epitaxial growth, and epitaxial breakdown. (C) 2007 American Institute of Physics.

引用

页数：3

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