a-Si:H/c-Si heterointerface formation and epitaxial growth studied by real time optical probes

被引：19

作者：

Gielis, J. J. H. ^{[1
]}

van den Oever, P. J. ^{[1
]}

van de Sanden, M. C. M. ^{[1
]}

Kessels, W. M. M. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 20期

关键词：

D O I：

10.1063/1.2740474

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The deposition of amorphous and epitaxial silicon thin films on H-terminated Si(100) has been studied in real time by the simultaneous application of spectroscopic ellipsometry, attenuated total reflection infrared spectroscopy, and optical second-harmonic generation. The morphology development of the films could be monitored nonintrusively in terms of critical point resonances and H bonding resolving the abruptness of the film-substrate interface and providing a clear distinction between direct heterointerface formation, nanometer-level epitaxial growth, and epitaxial breakdown. (C) 2007 American Institute of Physics.

引用

页数：3

共 16 条

[11] THIN-FILM COALESCENCE IN HYDROGENATED AMORPHOUS-SILICON PROBED BY SPECTROSCOPIC ELLIPSOMETRY WITH MILLISECOND-SCALE RESOLUTION [J].

LI, YM ;

AN, I ;

NGUYEN, HV ;

WRONSKI, CR ;

COLLINS, RW .

PHYSICAL REVIEW LETTERS, 1992, 68 (18) :2814-2817

[12] Monitoring and modeling silicon homoepitaxy breakdown with real-time spectroscopic ellipsometry [J].

Teplin, CW ;

Levi, DH ;

Iwaniczko, E ;

Jones, KM ;

Perkins, JD ;

Branz, HM .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)

[13] Explanation of the limiting thickness observed in low-temperature silicon epitaxy [J].

Thiesen, J ;

Branz, HM ;

Crandall, RS .

APPLIED PHYSICS LETTERS, 2000, 77 (22) :3589-3591

[14]

VANDENOEVER PJ, IN PRESS THIN SOLID

[15] Atomic structure and electronic properties of c-Si/a-Si:H heterointerfaces [J].

Yan, YF ;

Page, M ;

Wang, TH ;

Al-Jassim, MM ;

Branz, HM ;

Wang, Q .

APPLIED PHYSICS LETTERS, 2006, 88 (12)

[16] OPTICAL-STANDARD SURFACES OF SINGLE-CRYSTAL SILICON FOR CALIBRATING ELLIPSOMETERS AND REFLECTOMETERS [J].

YASUDA, T ;

ASPNES, DE .

APPLIED OPTICS, 1994, 33 (31) :7435-7438

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