A 210-GHz fT SiGe HBT with a non-self-aligned structure

被引：66

作者：

Jeng, SJ ^{[1
]}

Jagannathan, B ^{[1
]}

Rieh, JS ^{[1
]}

Johnson, J ^{[1
]}

Schonenberg, KT ^{[1
]}

Greenberg, D ^{[1
]}

Stricker, A ^{[1
]}

Chen, H ^{[1
]}

Khater, M ^{[1
]}

Ahlgren, D ^{[1
]}

Freeman, G ^{[1
]}

Stein, K ^{[1
]}

Subbanna, S ^{[1
]}

机构：

[1] IBM Commun R & D Ctr, Hopewell Jct, NY 12533 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 11期

关键词：

bipolar transistors; germanium; semiconductor heterojunctions; silicon;

D O I：

10.1109/55.962657

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A record 210-GHz f(T) SiGe heterojunction bipolar transistor at a collector current density of 6-9 mA/mum(2) is fabricated with a new nonself-aligned (NSA) structure based on 0.18 pm technology. This NSA structure has a low-complexity emitter and extrinsic base process which reduces overall thermal cycle and minimizes transient enhanced diffusion. A low-power performance has been achieved which requires only 1 mA collector current to reach 200-GHz f(T). The performance is a result of narrow base width and reduced parasitics in the device. Detailed comparison is made to a 120-GHz self-aligned production device.

引用

页码：542 / 544

页数：3

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