Submicron AlInAs/InGaAs HBT with 160 GHz fT at 1 mA collector current

被引：15

作者：

Sokolich, M ^{[1
]}

Fields, CH ^{[1
]}

Madhav, M ^{[1
]}

机构：

[1] HRL Labs LLC, Malibu, CA 90265 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 01期

关键词：

compound semiconductors; heterojunction bipolar transistors; high-speed electronics; InGaAs; millimeter-wave bipolar transistor; semiconductor device modeling;

D O I：

10.1109/55.892427

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have demonstrated a submicron heterojunction bipolar transistor (SHBT) with a unity current gain cutoff frequency (f(t)) of 160 GHz at the very low current level of 1 mA. The AlInAs/InGaAs SHBT has a thin collector and uses stepper lithography with 0.1 mum registration accuracy to reduce the parasitic elements that typically limit the performance of small transistors, The same device has 100 GHz f(t) at 200 muA. The result substantially improves upon the cutoff frequency of submicron compound semiconductor devices. The technology is appropriate for high speed, low power, high-density circuits.

引用

页码：8 / 10

页数：3

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