Reduction of base-collector capacitance in InP/InGaAs HBT's using a novel double polyimide planarization process

被引：11

作者：

Shin, H ^{[2
]}

Gaessler, C

Leier, H

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

[2] Daimler Benz AG, Res Ctr, D-89081 Ulm, Germany

来源：

IEEE ELECTRON DEVICE LETTERS | 1998年 / 19卷 / 08期

关键词：

base-collector capacitance; InP/InGaAs HBT;

D O I：

10.1109/55.704405

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The parasitic base-collector capacitance (C-BC) in InP/InGaAs heterojunction bipolar transistors (HBT's) has been reduced using a novel double polyimide planarization process which avoids damage of the extrinsic base layer, The extrinsic base metal outside the base-collector mesa is placed on the polyimide by polyimide coating and etch-back to the base layer.We obtained f(T) of 81 GHz and f(MAX) of 103 GHz with a 2 x 10 mu m emitter. Performance comparison between two devices nith the same area of 2 x 2 mu m but with different base-collector mesa area showed 56% reduction of C-BC and 35% increase of f(T) and f(MAX).

引用

页码：297 / 299

页数：3

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