Reduction of base-collector capacitance by undercutting the collector and subcollector in GaInAs/InP DHBT's

被引：26

作者：

Miyamoto, Y

Rios, JMM

Dentai, AG

Chandrasekhar, S

机构：

[1] AT and T Bell Laboratories, Crawford Hill Laboratory, Holmdel

[2] Dept. of Elec. and Electron. Eng., Tokyo Institute of Technology, Meguro-ku, Tokyo, 152, 2-12-1, O-okayama

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 03期

关键词：

D O I：

10.1109/55.485179

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The total base-collector capacitance (C-BC) of GaInAs/InP double heterojunction bipolar transistors (DHBT's) has been reduced by the etching away of the semiconductor layers below the extrinsic base region, resulting in an undercut structure, The reduction was further enhanced by using a novel composite subcollector structure. A 54% reduction of total CBC and improvement of microwave characteristics (an increase of 20% in f(T) and 38% in f(max)) were observed as a result of the undercut process.

引用

页码：97 / 99

页数：3

共 8 条

[1] GAAS/(GA,AL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED OXYGEN-IMPLANTED ISOLATION LAYERS [J].