ACCURATE MEASUREMENT TECHNIQUE FOR BASE TRANSIT-TIME IN HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：11

作者：

LEE, S ^{[1
]}

GOPINATH, A ^{[1
]}

PACHUTA, SJ ^{[1
]}

机构：

[1] THREE M CO,ST PAUL,MN 55144

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 17期

关键词：

TRANSISTORS; BIPOLAR DEVICES; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19910973

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The minority electron mobility, which agrees with the prediction of phase-shift analysis and Monte Carlo simulations, in p-type GaAs base doped to 3.0 x 10(19) cm-3 of AlGaAs/GaAs HBTs at 300 K has been measured using an accurate measurement technique for the base transit time. The base transit time of the Al(x)Ga1-xAs/GaAs composition graded base HBT was also measured using this technique.

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收藏

页码：1551 / 1553

页数：3

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